RGPV Electronic Devices - December 2015 Exam Question Paper

RGPV Electronics and Communication Engineering (Semester 3)
Electronic Devices
December 2015

Total marks: --
Total time: --

INSTRUCTIONS
(1) Assume appropriate data and state your reasons
(2) Marks are given to the right of every question
(3) Draw neat diagrams wherever necessary

1(a) Give the energy band description of semiconductor

2 M

1(b) Differentiate between diffusion and transition capaciatance.

2 M

1(c) Discuss the effect of temperature on semiconductor.

3 M

Solve any one question from Q.1(d) & Q.1(e)

1(d) What is p-n Junction? Explain the formation of potential barrier in p-n Junction.

7 M

1(e) Write short note on:
i) Limitation in the operating condition of p-n junction.
ii) Knee voltage

7 M

2(a) Discuss the importance of Peak inverse voltage in rectifier.

2 M

2(b) An ac voltage of peak value 20V is connected in series with a silicon-diode and Load Resistance of 500Ω. If the forward resistance of diode is 10ω, find peak current through diode.

2 M

2(c) What is ripple factor? What is its value for half wave rectifier?

3 M

Solve any one question from Q.2(d) & Q.2(e)

2(d) Explain the working of full wave bridge rectifier.

7 M

2(e) With the help of diagram difference between a Clipper and Clamper circuit.

7 M

3(a) What is Schottky diode? Write three applications of it .

2 M

3(b) Discuss the mechanism of avalanche breakdown.

2 M

3(c) Draw the V-I characteristic of Zener diode and write the advantages and disadvantages of zener diode.

3 M

Solve any one question from Q.3(d) & Q.3(e)

3(d) Write short note on : i) Photo diode ii) Photo transistor

7 M

3(e) Explain how zener diode maintains constant current across the load.

7 M

4(a) Define the following:
i) Voltage gain ii) Power gain
iii) Effective collector load

2 M

4(b) In a common base connection, current amplification factor is 0.9, if the emitter current is 1mA, determine the value of base current.

2 M

4(c) Explain the operation of transistor as an amplifier.

3 M

Solve any one question from Q.4(d) & Q.4(e)

4(d) Write a short note on:
i) Ebers moll model
ii) Uni-Junction Transistor(UJT)

7 M

4(e) Draw the input and output characteristics of CB connection. What do you infer from these characteristics.

7 M

5(a) Define pinch off voltage V_p.

2 M

5(b) Define NMOS and PMOS devices.

2 M

5(c) State the properties of MOSFET. (Any three)

3 M

Solve any one question from Q.5(d) & Q.5(e)

5(d) Explain the basic operation and characteristics of P-channel depletion type MOSFET.

7 M

5(e) Given I_DSS=6mA and V_p=-4.5V
i) Determine I_D at V_GS=-2 and -3.6V
ii) Determine V_GS at I_D=3 and 5.5mA

7 M

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