STUPIDSID
Solve any five :-
1 (a)
Explain effect of temperature on characteristics of PN junction diode.
4 M
1 (b)
Why LC oscillators are prefered for high frequency applications?
4 M
1 (c)
Find RB and RC for the circuit shown to obtain VCE=5V and IC=2mA
4 M
1 (d)
In n-channel MOSFET VDS=5V, VGS=5V, VBS=0, W=10 ?m, L=5 ?m k'n=100 mA/V2 and VTO=1V. Calculate its drain current for channel length modulation factor ? of 0 and 0.25 V-1
4 M
1 (e)
Draw and explain small signal hybrid-Pi model of BJT including early effect.
4 M
1 (f)
Differentiate between NJT and MOSFET
4 M
2 (a)
Find ICQ and VCEQ for the circuit shown in figure 2a if ?=100
10 M
2 (b)
Draw and explain energy band diagram of MOS capacitor in accumulation, depletion and inversion region.
10 M
3 (a)
Draw and explain working of transisterized Wien Bridge Oscillator
10 M
3 (b)
The JFET shown in figure 3b has parameter IDSS=8mA and Vp=4V. Determine VG, IDSQ, VGSQ and VDSQ
10 M
4 (a)
For the common gate circuit shown in figure 4s, the NMOS transistor parameters are VTN=1, kn=3 mA/V2 and ?=0
(i) Determine IDSQ and VDSQ
(ii) Calculate gm and ro
(iii) Find the small signal voltage gain Av= v0/v1. Assume Cc1 and Cc2 acts as short circuit for small-signal analysis
10 M
4 (b)
The parameter of the transistor in the circuit shown in figure 4b are ?=100 and VA=100V.
(i) Determine the voltages at base and emitter terminals
(ii) Find Rc such that VCEQ=3.5V and
(iii) Assuming CC and CE acts as short circuit determine small signal voltages gain Av= v0/vs
10 M
5 (a)
Derive expression for voltage gain NMOS source follower cicuit
8 M
5 (b)
For the common base amplifier shown in figure 5b, derive expression for voltage gain, current gain, input resistance and output resistance using hybrid-? model
12 M
Write short note on any three :-
6 (a)
Series and shunt clippers
7 M
6 (b)
Twin-T oscillator
7 M
6 (c)
MOSFET operation
7 M
6 (d)
Construction and operation of varactor diode.
7 M
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